We have successfully conduct ODE model for both T3 design and P2 design. However, there's a inborn defect. The ODE models regard memory as a switch, only two state - 0 and 1. Actually, the memory is continous. Besides that, since the number of molecules in cell is not large enough, which means the circuit itself has a stochastic property. For these reasons, we conduct a stochastic model. Since ODE model for P2 is not as good as the one for T3, we will only conduct stochastic model for the T3 design.
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